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Highly regarded as a key enabler for smaller, higher performance,
power-efficient communications products, SiGe technology combines
the electrical properties of silicon and germanium. This can double
and even quadruple circuit-switching speeds while still retaining
the cost and integration benefits of conventional silicon technology.
Jazz Semiconductor’s SiGe process is available on
its proven 0.35-micron, 0.18-micron, 0.13-micron analog technology,
and has been optimized to enable the world's lowest power SiGe devices
for today's high-frequency wireless communications and high-speed
networking products. The company has demonstrated an industry-leading
manufacturing process that reaches switching speeds of greater than
200GHz Ft (cut-off frequency for current gain) and Fmax (cut-off
for power gain). A brief overview of the Jazz SiGe BiCMOS process
portfolio follows.
SBC18H2 and SBC13H2
Our most advanced SiGe BiCMOS technology features 0.18-micron or 0.13-micron
CMOS gate lengths and SiGe bipolar transistor frequencies of greater
than 200GHz for optical-networking and wireless communications applications.
SBC13
SBC13 uses a 1.2/3.3V dual gate oxide process to form the base CMOS,
with the addition of SiGe transistors offering a range of Ft, Fmax, and BVceo
for design flexibility, with an Ft up to 200GHz and a separate high-power transistor.
The process also supports up to six layers of aluminum metal, a 5.6 fF/µm² linear MIM
capacitor, a triple well module, Nwell resistor, MOS varactor, and a low and high
value unsilicided poly resistor. The top metal is 3µm thick aluminum to support high-Q
inductors. The technology is offered through Jazz Semiconductor’s integrated design
environment supporting the latest EDA tools and flows for fast and accurate design
cycles of RF, analog and mixed-signal products.
SBC18HX
Offers high-performance 0.18-micron SiGe bipolar and high quality passive
elements combined with high density 0.18-micron CMOS for high-speed
networking and millimeter wave applications. The process offers SiGe
transistors with peak Ft of 155GHz and peak Fmax of 200GHz ideal for
low-power, high performance millimeter wave and OC-192 and OC-768
circuits. SBC18HX comes standard with three bipolar (NPN) transistor
types, 1.8 and 3.3 volt CMOS (dual-gate), deep trench isolation, lateral
and vertical PNP transistors, MIM capacitors, high-performance varactors,
poly-silicon as well as metal and Nwell resistors, high-Q inductors,
a triple well option, and six layers of metal.
SBC18 and SBL13
Jazz SBC18 provides a next-generation solution for ultra low power,
integrated wireless and networking products that require high-performance
bipolar transistors with high-quality passives together with high density
logic. SBC18 uses a self-aligned 0.18-micron SiGe bipolar transistor
with Ft of 75GHz enabling new RF circuit benchmarks for gain, noise
figure and linearity to be attained at a cost that is competitive
with previous-generation solutions. In addition to the availability
of two low-noise SiGe transistors, the SBC18 process platform includes
options for a 150GHz SiGe transistor, high-speed vertical PNP transistors,
5.6fF/µm2 high-density MIM capacitors, varactors, poly resistors,
high-Q inductors built in thick top metal layers, deep trench or triple-well
isolation, and is available with three to six layers of metal.
SBC35
SBC35 is a mature, low-power, cost-effective solution for both networking
and wireless applications. Designers have the flexibility of using
any combination of three SiGe bipolar (NPN) transistors, each of which
provides a different optimization for power and speed. The highest
speed transistor has an Ft of 62GHz and is used for high-performance
blocks while the high power transistor can be used to integrate power
amplifiers or high-speed drivers on the same chip. In addition to
the three NPN transistors, SBC35 comes standard with
3.3 volt CMOS, deep trench isolation, lateral PNP transistors, MIM
and MIS capacitors, high-performance varactors, poly and Nwell resistors,
and high-Q inductors. SBC35 options include 5V CMOS, a vertical PNP
transistor, a higher density linear MIM/MIS capacitor stack at 5.3fF/µm2,
triple-well isolation, three or four layers of metal, and a thick
top-metal.
BC35
A 0.35-micron silicon BiCMOS technology for low-cost wireless
solutions. With a peak Ft of 30GHz, this technology offers a balance
of cost and performance that makes it attractive for mature wireless
products. BC35 comes standard with two bipolar (NPN) transistor types,
3.3 volt CMOS, lateral PNP, MIM and MIS capacitors, high-performance
varactors, and poly and Nwell resistors. Options include three
or four layers of metal, high-Q inductors, and a
thick top metal.
| Features |
SBL13 |
SBC13H2 |
SBC18H2 |
SBC18HX |
SBC18 |
SBC35 |
BC35 |
| NPN |
Ft
(GHz) |
90/67 |
200/75 |
200/75 |
155/78/38 |
78/38 |
61/46/23 |
27/22 |
| |
Fmax
(GHz) |
100/123 |
200/150 |
200/150 |
200/190/150 |
177/138 |
75/89/65 |
42/37 |
| |
BVceo |
2.4/3.5 |
2.0/3.5 |
2.0/3.5 |
2.2/3.5/6.0 |
3.5/6.0 |
2.5/3.8/6.0 |
3.8/6.2 |
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| CMOS |
Vdd
(V) |
1.2/3.3 |
1.2/3.3 |
1.8/3.3 |
1.8/3.3 |
3.3 |
3.3 |
3.3 |
| |
Density
(µm) |
0.13 |
0.13 |
0.18 |
0.18 |
0.25 |
0.35 |
0.35 |
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| Metal |
Layers |
6 |
6 |
6 |
6 |
3 to 6 |
Up to 4 |
Up to 4 |
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